GENERATION OF INTERFACE STATES BY HOT HOLE INJECTION IN MOSFETS

[11] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 77 - 89

[12] LAI SK, 1981, ELECTROPHYSICS SERIE, V7, P118

[13] ANALYTICAL APPROACH OF HOT-ELECTRON TRANSPORT IN SMALL SIZE MOSFETS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (08) : 763 - 771

[14] THE EFFECT OF GATE BIAS ON HOT-ELECTRON TRAPPING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L574 - L576

[15] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[16] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[17] EFFECT OF ELECTRON TRAPPING ON IGFET CHARACTERISTICS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 65 - 76

[18] HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 273 - 282

[19] THRESHOLD INSTABILITY IN IGFETS DUE TO EMISSION OF LEAKAGE ELECTRONS FROM SILICON SUBSTRATE INTO SILICON DIOXIDE [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 198 - 200

[20] INTERFACE STATES IN MOSFETS DUE TO HOT-ELECTRON INJECTION DETERMINED BY THE CHARGE PUMPING TECHNIQUE [J]. ELECTRONICS LETTERS, 1981, 17 (20) : 761 - 762

[11] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 77 - 89

[12] LAI SK, 1981, ELECTROPHYSICS SERIE, V7, P118

[13] ANALYTICAL APPROACH OF HOT-ELECTRON TRANSPORT IN SMALL SIZE MOSFETS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (08) : 763 - 771

[14] THE EFFECT OF GATE BIAS ON HOT-ELECTRON TRAPPING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L574 - L576

[15] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[16] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[17] EFFECT OF ELECTRON TRAPPING ON IGFET CHARACTERISTICS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 65 - 76

[18] HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 273 - 282

[19] THRESHOLD INSTABILITY IN IGFETS DUE TO EMISSION OF LEAKAGE ELECTRONS FROM SILICON SUBSTRATE INTO SILICON DIOXIDE [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 198 - 200

[20] INTERFACE STATES IN MOSFETS DUE TO HOT-ELECTRON INJECTION DETERMINED BY THE CHARGE PUMPING TECHNIQUE [J]. ELECTRONICS LETTERS, 1981, 17 (20) : 761 - 762