ANALYTICAL APPROACH OF HOT-ELECTRON TRANSPORT IN SMALL SIZE MOSFETS

被引：14

作者：

LEBURTON, JP

GESCH, H

DORDA, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 08期

关键词：

D O I：

10.1016/0038-1101(81)90058-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：763 / 771

页数：9

共 27 条

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[8] TRANSPORT OF HOT CARRIERS IN SEMICONDUCTOR QUANTIZED INVERSION LAYERS [J].

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[9]

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[10] CURRENT-VOLTAGE CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS WITH SHORT CHANNELS [J].

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