TRANSPORT OF HOT CARRIERS IN SEMICONDUCTOR QUANTIZED INVERSION LAYERS

被引：21

作者：

FERRY, DK ^{[1
]}

机构：

[1] OFF NAVAL RES,ARLINGTON,VA 22217

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 01期

关键词：

D O I：

10.1016/0038-1101(78)90124-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：115 / 121

页数：7

共 52 条

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[3] THEORY OF QUANTUM TRANSPORT IN A 2-DIMENSIONAL ELECTRON-SYSTEM UNDER MAGNETIC-FIELDS .4. OSCILLATORY CONDUCTIVITY
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[4] THEORY OF QUANTUM TRANSPORT IN A 2-DIMENSIONAL ELECTRON-SYSTEM UNDER MAGNETIC-FIELDS .3. MANY-SITE APPROXIMATION
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[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 350 - 353
[6] BAUER G, 1974, SPRINGER TRACTS MODE, V74
[7] Conwell E M, 1967, HIGH FIELD TRANSPORT
[8] HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS
DAS, P
FERRY, DK
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (10) : 851 - 855
[9] SOME MAGNETIC PROPERTIES OF METALS .2. THE INFLUENCE OF COLLISIONS ON THE MAGNETIC BEHAVIOUR OF LARGE SYSTEMS
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[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1952, 211 (1107): : 517 - 525
[10] MAGNETO-TRANSPORT PROPERTIES OF SILICON INVERSION LAYERS AT LOW CARRIER DENSITIES
ENGLERT, T
LANDWEHR, G
[J]. SURFACE SCIENCE, 1976, 58 (01) : 217 - 226

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