TRANSPORT OF HOT CARRIERS IN SEMICONDUCTOR QUANTIZED INVERSION LAYERS

被引：21

作者：

FERRY, DK ^{[1
]}

机构：

[1] OFF NAVAL RES,ARLINGTON,VA 22217

来源：

关键词：

D O I：

10.1016/0038-1101(78)90124-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：115 / 121

页数：7

共 52 条

[41] NOTES ON THEORY OF HOT ELECTRONS IN SEMICONDUCTORS
KUROSAWA, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (06) : 937 - &
[42] INTERVALLEY SCATTERING SELECTION-RULES FOR SI AND GE
LAX, M
BIRMAN, JL
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 49 (02): : K153 - &
[43] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON
LONG, D
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 2024 - 2032
[44] HOT-ELECTRONS IN SI INVERSION LAYER
NAKAMURA, K
[J]. SURFACE SCIENCE, 1976, 58 (01) : 48 - 55
[45] NING TH, 1973, B AM PHYSICAL SOC, V18, P344
[46] SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE
SAH, CT
TSCHOPP, LL
NING, TH
[J]. SURFACE SCIENCE, 1972, 32 (03) : 561 - &
[47] DRIFT-VELOCITY SATURATION OF HOLES IN SI INVERSION LAYERS
SATO, T
TAKEISHI, Y
TANGO, H
OHNUMA, H
OKAMOTO, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1971, 31 (06) : 1846 - &
[48] ELECTRON AND HOLE MOBILITY IN ZNSIP-2
SIEGEL, W
HEINRICH, A
ZIEGLER, E
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (01): : 269 - 279
[49] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
HOWARD, WE
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &
[50] Stern F., 1974, Critical Reviews in Solid State Sciences, V4, P499