THRESHOLD INSTABILITY IN IGFETS DUE TO EMISSION OF LEAKAGE ELECTRONS FROM SILICON SUBSTRATE INTO SILICON DIOXIDE

被引：33

作者：

NING, TH ^{[1
]}

OSBURN, CM ^{[1
]}

YU, HN ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 03期

关键词：

D O I：

10.1063/1.88991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：198 / 200

页数：3

共 20 条

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[5] AVALANCHE INJECTION INTO OXIDE IN SILICON GATE-CONTROLLED DEVICES .1. THEORY [J].

BULUCEA, C .

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[7] ELECTRON GATE CURRENTS AND THRESHOLD STABILITY IN N-CHANNEL STACKED GATE MOS TETRODE [J].

ERB, DM ;

DILL, HG ;

TOOMBS, TN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) :105-&

[8] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J].

HARA, H ;

OKAMOTO, Y ;

OHNUMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) :1103-+

[9] COMPARISON OF LEAKAGE CURRENTS IN ION-IMPLANTED AND DIFFUSED P-N-JUNCTIONS [J].

KIRCHER, CJ .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2167-2173

[10]

MCDONALD BA, 1970, IEEE T ELECTRON DEV, VED17, P871, DOI 10.1109/T-ED.1970.16938

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