EFFECT OF ELECTRON TRAPPING ON IGFET CHARACTERISTICS

被引：87

作者：

NING, TH ^{[1
]}

OSBURN, CM ^{[1
]}

YU, HN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1977年 / 6卷 / 02期

关键词：

D O I：

10.1007/BF02660375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：65 / 76

页数：12

共 16 条

[1] HOT-CARRIER INSTABILITY IN IGFETS
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[J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 147 - 148
[2] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES
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[J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 94 - 96
[3] AVALANCHE INJECTION INTO OXIDE IN SILICON GATE-CONTROLLED DEVICES .2. EXPERIMENTAL RESULTS
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[J]. SOLID-STATE ELECTRONICS, 1975, 18 (05) : 381 - 391
[4] AVALANCHE INJECTION INTO OXIDE IN SILICON GATE-CONTROLLED DEVICES .1. THEORY
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[J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 363 - 374
[5] ELECTRON GATE CURRENTS AND THRESHOLD STABILITY IN N-CHANNEL STACKED GATE MOS TETRODE
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DILL, HG
TOOMBS, TN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) : 105 - &
[6] EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 42 - 47
[7] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE
HARA, H
OKAMOTO, Y
OHNUMA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1103 - +
[8] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS
NICOLLIA.EH
BERGLUND, CN
SCHMIDT, PF
ANDREWS, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &
[9] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2
NICOLLIAN, EH
GOETZBERGER, A
BERGLUND, CN
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +
[10] HIGH-FIELD CAPTURE OF ELECTRONS BY COULOMB-ATTRACTIVE CENTERS IN SILICON DIOXIDE
NING, TH
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3203 - 3208

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