EFFECT OF ELECTRON TRAPPING ON IGFET CHARACTERISTICS

[11] ELECTRON TRAPPING AT POSITIVELY CHARGED CENTERS IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (05) : 248 - 250

[12] NING TH, 1974, J APPL PHYS, V45, P5373, DOI 10.1063/1.1663246

[13] THRESHOLD INSTABILITY IN IGFETS DUE TO EMISSION OF LEAKAGE ELECTRONS FROM SILICON SUBSTRATE INTO SILICON DIOXIDE [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 198 - 200

[14] ELECTRON INJECTION INTO SIO2 FROM AN AVALANCHING P-N-JUNCTION [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (17) : 2124 - 2130

[15] AVALANCHE-INJECTED ELECTRON CURRENTS IN SIO2 AT HIGH INJECTION DENSITIES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (09) : 963 - 971

[16] YOUNG DM, UNPUBLISHED

[11] ELECTRON TRAPPING AT POSITIVELY CHARGED CENTERS IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (05) : 248 - 250

[12] NING TH, 1974, J APPL PHYS, V45, P5373, DOI 10.1063/1.1663246

[13] THRESHOLD INSTABILITY IN IGFETS DUE TO EMISSION OF LEAKAGE ELECTRONS FROM SILICON SUBSTRATE INTO SILICON DIOXIDE [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 198 - 200

[14] ELECTRON INJECTION INTO SIO2 FROM AN AVALANCHING P-N-JUNCTION [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (17) : 2124 - 2130

[15] AVALANCHE-INJECTED ELECTRON CURRENTS IN SIO2 AT HIGH INJECTION DENSITIES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (09) : 963 - 971

[16] YOUNG DM, UNPUBLISHED