HOT-ELECTRON INJECTION INTO THE OXIDE IN N-CHANNEL MOS DEVICES

被引：92

作者：

EITAN, B

FROHMANBENTCHKOWSKY, D

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 03期

关键词：

D O I：

10.1109/T-ED.1981.20336

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：328 / 340

页数：13

相关论文

共 17 条

[1] HOT-CARRIER INSTABILITY IN IGFETS
ABBAS, SA
DOCKERTY, RC
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 147 - 148
[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[3] AVALANCHE INJECTION INTO OXIDE IN SILICON GATE-CONTROLLED DEVICES .1. THEORY
BULUCEA, C
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 363 - 374
[4] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS
COTTRELL, PE
TROUTMAN, RR
NING, TH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 520 - 533
[5] CHARACTERIZATION OF SILICON-ON-SAPPHIRE IGFET TRANSISTORS
ELMANSY, YA
CAUGHEY, DM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1148 - 1153
[6] FAMOS - NEW SEMICONDUCTOR CHARGE STORAGE DEVICE
FROHMANB.D
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 517 - &
[7] KELDYSH LV, 1965, SOV PHYS JETP-USSR, V21, P1135
[8] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES
NICOLLIAN, EH
BERGLUND, CN
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +
[9] HIGH-FIELD CAPTURE OF ELECTRONS BY COULOMB-ATTRACTIVE CENTERS IN SILICON DIOXIDE
NING, TH
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3203 - 3208
[10] Phillips A. Jr., 1975, 1975 International Electron Devices Meeting. (Technical digest), P39