FAMOS - NEW SEMICONDUCTOR CHARGE STORAGE DEVICE

[1] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +

[2] MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1971, 18 (08) : 332 - &

[3] AN INTEGRATED METAL-NITRIDE-OXIDE-SILICON (MNOS) MEMORY [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (06) : 1190 - &

[4] FROHMANBENTCHKO.D, 1971, ISSCC, P80

[5] FROHMANBENTCHKO.D, 1969, IEEE T, VED16, P108

[6] FROHMANBENTCHKO.D, 1971, IEEE SOLID STATE CIR

[7] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4886 - +

[8] HILL HG, 1969, SOLID STATE ELECTRON, V12, P981

[9] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[10] A FLOATING GATE AND ITS APPLICATION TO MEMORY DEVICES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1288 - +

[1] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +

[2] MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1971, 18 (08) : 332 - &

[3] AN INTEGRATED METAL-NITRIDE-OXIDE-SILICON (MNOS) MEMORY [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (06) : 1190 - &

[4] FROHMANBENTCHKO.D, 1971, ISSCC, P80

[5] FROHMANBENTCHKO.D, 1969, IEEE T, VED16, P108

[6] FROHMANBENTCHKO.D, 1971, IEEE SOLID STATE CIR

[7] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4886 - +

[8] HILL HG, 1969, SOLID STATE ELECTRON, V12, P981

[9] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[10] A FLOATING GATE AND ITS APPLICATION TO MEMORY DEVICES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1288 - +