LOW-LEVEL AVALANCHE MULTIPLICATION IN IGFETS

[1] ABBAS S, 1974 INT EL DEV M TE, P404

[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[3] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[4] CHARGE INJECTION INTO SIO2 FROM REVERSE-BIASED JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 648 - 651

[5] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[6] ELECTRON GATE CURRENTS AND THRESHOLD STABILITY IN N-CHANNEL STACKED GATE MOS TETRODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) : 105 - &

[7] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1103 - +

[8] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +

[9] LONGO HE, 1970, Z ANGEW PHYSIK, V29, P166

[10] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J]. PHYSICAL REVIEW, 1958, 111 (05): : 1245 - 1254

[1] ABBAS S, 1974 INT EL DEV M TE, P404

[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[3] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[4] CHARGE INJECTION INTO SIO2 FROM REVERSE-BIASED JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 648 - 651

[5] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[6] ELECTRON GATE CURRENTS AND THRESHOLD STABILITY IN N-CHANNEL STACKED GATE MOS TETRODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) : 105 - &

[7] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1103 - +

[8] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +

[9] LONGO HE, 1970, Z ANGEW PHYSIK, V29, P166

[10] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J]. PHYSICAL REVIEW, 1958, 111 (05): : 1245 - 1254