ROLE OF HOT-HOLE INJECTION IN HOT-CARRIER EFFECTS AND THE SMALL DEGRADED CHANNEL REGION IN MOSFETS

被引：115

作者：

TAKEDA, E ^{[1
]}

SHIMIZU, A ^{[1
]}

HAGIWARA, T ^{[1
]}

机构：

[1] HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 09期

关键词：

D O I：

10.1109/EDL.1983.25751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：329 / 331

页数：3

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[5] HOT HOLE EFFECT ON SURFACE-STATE DENSITY AND MINORITY-CARRIER GENERATION RATES IN SI-MOS DIODES MEASURED BY DLTS [J].

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[8]

Takeda E., 1982, 1982 Symposium on VLSI Technology. Digest of Papers, P40

[9]

TAKEDA E, 1983, UNPUB APR IEE P VLSI

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