PERFORMANCE AND HOT-CARRIER EFFECTS OF SMALL CRYO-CMOS DEVICES

[1] Aoki M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P577

[2] LOW-FREQUENCY 1-F NOISE IN MOSFETS AT LOW CURRENT LEVELS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5135 - 5140

[3] AOKI M, 1983, NAT C REC SEMICONDUC, P82

[4] AOKI M, IEEE T ELECTRON DEVI, P52

[5] ASAI S, 1984, 16 C SOL STAT DEV MA, P221

[6] BURNS JR, 1964, RCA REV, V25, P627

[7] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J]. SURFACE SCIENCE, 1973, 34 (03) : 717 - 731

[8] 1 MU-M MOSFET VLSI TECHNOLOGY .2. DEVICE DESIGNS AND CHARACTERISTICS FOR HIGH-PERFORMANCE LOGIC APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 325 - 333

[9] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[10] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229

[1] Aoki M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P577

[2] LOW-FREQUENCY 1-F NOISE IN MOSFETS AT LOW CURRENT LEVELS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5135 - 5140

[3] AOKI M, 1983, NAT C REC SEMICONDUC, P82

[4] AOKI M, IEEE T ELECTRON DEVI, P52

[5] ASAI S, 1984, 16 C SOL STAT DEV MA, P221

[6] BURNS JR, 1964, RCA REV, V25, P627

[7] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J]. SURFACE SCIENCE, 1973, 34 (03) : 717 - 731

[8] 1 MU-M MOSFET VLSI TECHNOLOGY .2. DEVICE DESIGNS AND CHARACTERISTICS FOR HIGH-PERFORMANCE LOGIC APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 325 - 333

[9] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[10] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229