MODIFIED 1/F TRAPPING NOISE THEORY AND EXPERIMENTS IN MOS-TRANSISTORS BIASED FROM WEAK TO STRONG INVERSION INFLUENCE OF INTERFACE STATES

被引：243

作者：

REIMBOLD, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 09期

关键词：

D O I：

10.1109/T-ED.1984.21687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1190 / 1198

页数：9

相关论文

共 34 条

[1] LOW-FREQUENCY 1-F NOISE IN MOSFETS AT LOW CURRENT LEVELS
AOKI, M
KATTO, H
YAMADA, E
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5135 - 5140
[2] MEASUREMENT OF INTERFACE STATE CHARACTERISTICS OF MOS-TRANSISTOR UTILIZING CHARGE-PUMPING TECHNIQUES
BACKENSTO, WV
VISWANATHAN, CR
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (02): : 44 - 52
[3] BIAS-DEPENDENT 1-F NOISE MODEL OF AN MOS-TRANSISTOR
BACKENSTO, WV
VISWANANATHAN, CR
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (02): : 87 - 93
[4] THEORY OF LOW FREQUENCY NOISE IN SI MOSTS
BERZ, F
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (05) : 631 - +
[5] BLASQUEZ G, 1983, 7TH P INT C NOIS PHY, P303
[6] CARRIER-DENSITY FLUCTUATIONS AND IGFET MOBILITY NEAR THRESHOLD
BREWS, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2193 - 2203
[7] TEMPERATURE-DEPENDENCE OF SUB-THRESHOLD CURRENTS IN MOS ELECTRON INVERSION LAYERS
CARD, HC
ULMER, RW
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (05) : 463 - 465
[8] CHAUSSE S, 1981, MODELE BRUIT TRANSIS
[9] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY
CHRISTEN.S
LUNDSTRO.I
SVENSSON, C
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &
[10] THEORY AND EXPERIMENTS ON SURFACE 1/F NOISE
FU, HS
SAH, CT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 273 - +

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