TEMPERATURE-DEPENDENCE OF SUB-THRESHOLD CURRENTS IN MOS ELECTRON INVERSION LAYERS

被引：5

作者：

CARD, HC ^{[1
]}

ULMER, RW ^{[1
]}

机构：

[1] MOTOROLA INC,DIV INTEGRATED CIRCUITS,AUSTIN,TX 78721

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 05期

关键词：

D O I：

10.1016/0038-1101(79)90150-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：463 / 465

页数：3

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