SUB-THRESHOLD CONDUCTION IN MOSFETS

[1] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 293 - +

[2] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[3] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 423 - 430

[4] JOHNSON, 1973, RCA REV MAR, P80

[5] EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 927 - +

[6] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[7] LEAKAGE CURRENTS OF MOS DEVICES UNDER SURFACE-DEPLETION CONDITIONS [J]. ELECTRONICS LETTERS, 1972, 8 (09) : 225 - +

[8] TAYLOR GS, UNPUBLISHED

[9] SUBTHRESHOLD CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1973, CT20 (06): : 659 - 665

[10] SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (02) : 55 - 60

[1] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 293 - +

[2] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[3] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 423 - 430

[4] JOHNSON, 1973, RCA REV MAR, P80

[5] EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 927 - +

[6] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[7] LEAKAGE CURRENTS OF MOS DEVICES UNDER SURFACE-DEPLETION CONDITIONS [J]. ELECTRONICS LETTERS, 1972, 8 (09) : 225 - +

[8] TAYLOR GS, UNPUBLISHED

[9] SUBTHRESHOLD CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1973, CT20 (06): : 659 - 665

[10] SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (02) : 55 - 60