SUBTHRESHOLD CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS

被引：48

作者：

TROUTMAN, RR ^{[1
]}

CHAKRAVARTI, SN ^{[1
]}

机构：

[1] IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA

来源：

IEEE TRANSACTIONS ON CIRCUIT THEORY | 1973年 / CT20卷 / 06期

关键词：

D O I：

10.1109/TCT.1973.1083759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：659 / 665

页数：7

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