SUBTHRESHOLD DRAIN LEAKAGE CURRENTS IN MOS FIELD-EFFECT TRANSISTORS

被引：26

作者：

GOSNEY, WM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 02期

关键词：

D O I：

10.1109/T-ED.1972.17399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：213 / &

相关论文

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