SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS

被引：74

作者：

TROUTMAN, RR ^{[1
]}

机构：

[1] IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1974年 / SC 9卷 / 02期

关键词：

D O I：

10.1109/JSSC.1974.1050462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：55 / 60

页数：6

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