INADEQUACY OF CLASSICAL THEORY OF MOS-TRANSISTOR OPERATING IN WEAK INVERSION

被引：49

作者：

VANOVERSTRAETEN, RJ ^{[1
]}

DECLERCK, G ^{[1
]}

BROUX, GL ^{[1
]}

机构：

[1] KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, LEUVEN, BELGIUM

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 12期

关键词：

D O I：

10.1109/T-ED.1973.17809

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1150 / 1153

页数：4

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[3]

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[8] LEAKAGE CURRENTS OF MOS DEVICES UNDER SURFACE-DEPLETION CONDITIONS [J].

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[9] ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS [J].

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) :146-+

[10] INFLUENCE OF SURFACE-POTENTIAL FLUCTUATIONS ON OPERATION OF MOS-TRANSISTOR IN WEAK INVERSION [J].

VANOVERSTRAETEN, RJ ;

DECLERCK, G ;

BROUX, GL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (12) :1154-1158

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