PRECISE MOSFET MODEL FOR LOW-VOLTAGE CIRCUITS

被引：20

作者：

MASUHARA, T ^{[1
]}

ETOH, J ^{[1
]}

NAGATA, M ^{[1
]}

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 06期

关键词：

D O I：

10.1109/T-ED.1974.17929

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：363 / 371

页数：9

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