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PRECISE MOSFET MODEL FOR LOW-VOLTAGE CIRCUITS
被引:20
作者
:
MASUHARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN
HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN
MASUHARA, T
[
1
]
ETOH, J
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN
HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN
ETOH, J
[
1
]
NAGATA, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN
HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN
NAGATA, M
[
1
]
机构
:
[1]
HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1974年
/ ED21卷
/ 06期
关键词
:
D O I
:
10.1109/T-ED.1974.17929
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:363 / 371
页数:9
相关论文
共 17 条
[1]
LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS
BARRON, MB
论文数:
0
引用数:
0
h-index:
0
BARRON, MB
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(03)
: 293
-
+
[2]
CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG
[3]
SURFACE TRANSPORT IN SEMICONDUCTORS
GREENE, RF
论文数:
0
引用数:
0
h-index:
0
GREENE, RF
FRANKL, DR
论文数:
0
引用数:
0
h-index:
0
FRANKL, DR
ZEMEL, J
论文数:
0
引用数:
0
h-index:
0
ZEMEL, J
[J].
PHYSICAL REVIEW,
1960,
118
(04):
: 967
-
975
[4]
HAYASHI Y, 1967, SSD676 IECE JAP TECH
[5]
SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
[J].
PROCEEDINGS OF THE IEEE,
1963,
51
(09)
: 1190
-
&
[6]
STEADY-STATE MATHEMATICAL THEORY FOR INSULATED GATE FIELD-EFFECT TRANSISTOR
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
KENNEDY, DP
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
MURLEY, PC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1973,
17
(01)
: 1
-
12
[7]
ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(05)
: 248
-
+
[8]
ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN
MERCKEL, G
论文数:
0
引用数:
0
h-index:
0
MERCKEL, G
BOREL, J
论文数:
0
引用数:
0
h-index:
0
BOREL, J
CUPCEA, NZ
论文数:
0
引用数:
0
h-index:
0
CUPCEA, NZ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(05)
: 681
-
+
[9]
EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS
PAO, HC
论文数:
0
引用数:
0
h-index:
0
PAO, HC
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(10)
: 927
-
+
[10]
AN MOS-ORIENTED INVESTIGATION OF EFFECTIVE MOBILITY THEORY
PIERRET, RF
论文数:
0
引用数:
0
h-index:
0
PIERRET, RF
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(03)
: 279
-
&
←
1
2
→
共 17 条
[1]
LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS
BARRON, MB
论文数:
0
引用数:
0
h-index:
0
BARRON, MB
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(03)
: 293
-
+
[2]
CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG
[3]
SURFACE TRANSPORT IN SEMICONDUCTORS
GREENE, RF
论文数:
0
引用数:
0
h-index:
0
GREENE, RF
FRANKL, DR
论文数:
0
引用数:
0
h-index:
0
FRANKL, DR
ZEMEL, J
论文数:
0
引用数:
0
h-index:
0
ZEMEL, J
[J].
PHYSICAL REVIEW,
1960,
118
(04):
: 967
-
975
[4]
HAYASHI Y, 1967, SSD676 IECE JAP TECH
[5]
SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
[J].
PROCEEDINGS OF THE IEEE,
1963,
51
(09)
: 1190
-
&
[6]
STEADY-STATE MATHEMATICAL THEORY FOR INSULATED GATE FIELD-EFFECT TRANSISTOR
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
KENNEDY, DP
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
IBM CORP, SYST PROD DIV LAB, E FISHKILL, NY 12533 USA
MURLEY, PC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1973,
17
(01)
: 1
-
12
[7]
ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(05)
: 248
-
+
[8]
ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN
MERCKEL, G
论文数:
0
引用数:
0
h-index:
0
MERCKEL, G
BOREL, J
论文数:
0
引用数:
0
h-index:
0
BOREL, J
CUPCEA, NZ
论文数:
0
引用数:
0
h-index:
0
CUPCEA, NZ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(05)
: 681
-
+
[9]
EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS
PAO, HC
论文数:
0
引用数:
0
h-index:
0
PAO, HC
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(10)
: 927
-
+
[10]
AN MOS-ORIENTED INVESTIGATION OF EFFECTIVE MOBILITY THEORY
PIERRET, RF
论文数:
0
引用数:
0
h-index:
0
PIERRET, RF
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(03)
: 279
-
&
←
1
2
→