ANALYSIS OF MOSFET DEGRADATION DUE TO HOT-ELECTRON STRESS IN TERMS OF INTERFACE-STATE AND FIXED-CHARGE GENERATION

被引：49

作者：

SHABDE, S

BHATTACHARYYA, A

KAO, RS

MULLER, RS

机构：

[1] SIGNET CORP,PHILIPS RES LABS,SUNNYVALE,CA 94088

[2] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 11期

关键词：

D O I：

10.1016/0038-1101(88)90007-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1603 / 1610

页数：8

共 8 条

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[2]

Hofmann K. R., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P104

[3] RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION [J].

HSU, FC ;

TAM, S .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :50-52

[4] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

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[5] EFFECTS OF HOT-CARRIER TRAPPING IN N-CHANNEL AND P-CHANNEL MOSFETS [J].

NG, KK ;

TAYLOR, GW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) :871-876

[6]

Poorter T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P100

[7]

SZE SM, 1981, PHYSICS SEMICONDUCTO, P447

[8] TRAPPED-ELECTRON AND GENERATED INTERFACE-TRAP EFFECTS IN HOT-ELECTRON-INDUCED MOSFET DEGRADATION [J].

TSUCHIYA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2291-2296

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