TRAPPED-ELECTRON AND GENERATED INTERFACE-TRAP EFFECTS IN HOT-ELECTRON-INDUCED MOSFET DEGRADATION

被引：60

作者：

TSUCHIYA, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 11期

关键词：

D O I：

10.1109/T-ED.1987.23234

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2291 / 2296

页数：6

共 15 条

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