ELECTRON TRAPPING IN SIO2 - AN INJECTION MODE DEPENDENT PHENOMENON

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[2] CHARGE INJECTION INTO SIO2 FROM REVERSE-BIASED JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 648 - 651

[3] ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO2 LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1085 - 1101

[4] GEDULA RA, 1976, J ELECTROCHEM SOC, V123, P42

[5] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523

[6] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[7] I-V CHARACTERISTICS OF MOS CAPACITORS WITH POLYCRYSTALLINE SILICON FIELD PLATES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5041 - 5044

[8] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[9] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +

[10] HIGH-FIELD CAPTURE OF ELECTRONS BY COULOMB-ATTRACTIVE CENTERS IN SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3203 - 3208

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[2] CHARGE INJECTION INTO SIO2 FROM REVERSE-BIASED JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 648 - 651

[3] ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO2 LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1085 - 1101

[4] GEDULA RA, 1976, J ELECTROCHEM SOC, V123, P42

[5] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523

[6] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[7] I-V CHARACTERISTICS OF MOS CAPACITORS WITH POLYCRYSTALLINE SILICON FIELD PLATES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5041 - 5044

[8] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[9] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +

[10] HIGH-FIELD CAPTURE OF ELECTRONS BY COULOMB-ATTRACTIVE CENTERS IN SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3203 - 3208