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DEPENDENCE OF CHANNEL ELECTRIC-FIELD ON DEVICE SCALING
被引:102
作者
:
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
机构
:
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1985年
/ 6卷
/ 10期
关键词
:
D O I
:
10.1109/EDL.1985.26226
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:551 / 553
页数:3
相关论文
共 5 条
[1]
A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS
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[J].
IEEE ELECTRON DEVICE LETTERS,
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[2]
SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION
ELMANSY, YA
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BELL NO RES,OTTAWA,ONTARIO,CANADA
ELMANSY, YA
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[J].
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[3]
HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT
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[J].
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[4]
Nguyen T. N., 1981, International Electron Devices Meeting, P596
[5]
MINIMOS - A TWO-DIMENSIONAL MOS-TRANSISTOR ANALYZER
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机构:
LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA
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机构:
LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA
LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA
SCHUTZ, A
POTZL, HW
论文数:
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引用数:
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h-index:
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机构:
LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA
LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA
POTZL, HW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
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: 1540
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←
1
→
共 5 条
[1]
A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(12)
: 505
-
507
[2]
SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION
ELMANSY, YA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
ELMANSY, YA
BOOTHROYD, AR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
BOOTHROYD, AR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
: 254
-
262
[3]
HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT
HU, CM
论文数:
0
引用数:
0
h-index:
0
HU, CM
TAM, SC
论文数:
0
引用数:
0
h-index:
0
TAM, SC
HSU, FC
论文数:
0
引用数:
0
h-index:
0
HSU, FC
KO, PK
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0
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0
h-index:
0
KO, PK
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
TERRILL, KW
论文数:
0
引用数:
0
h-index:
0
TERRILL, KW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
: 375
-
385
[4]
Nguyen T. N., 1981, International Electron Devices Meeting, P596
[5]
MINIMOS - A TWO-DIMENSIONAL MOS-TRANSISTOR ANALYZER
SELBERHERR, S
论文数:
0
引用数:
0
h-index:
0
机构:
LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA
LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA
SELBERHERR, S
SCHUTZ, A
论文数:
0
引用数:
0
h-index:
0
机构:
LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA
LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA
SCHUTZ, A
POTZL, HW
论文数:
0
引用数:
0
h-index:
0
机构:
LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA
LUDWIG BOLTZMANN INST FESTKORPERPHYS, VIENNA, AUSTRIA
POTZL, HW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(08)
: 1540
-
1550
←
1
→