MOBILITY STUDIES OF DEGENERATE INDIUM-DOPED CDS EVAPORATED FILMS

[1] DOBROVOLSKII VN, 1963, SOV PHYS-SOL STATE, V4, P2025

[2] DOBROVOLSKII VN, 1962, FIZ TVERD TELA, V4, P2760

[3] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 79 (06): : 1013 - 1014

[4] KARPOVIC.IA, 1965, FIZ TVERD TELA+, V6, P2714

[5] KARPOVICH IA, 1964, FIZ TVERD TELA, V6, P3392

[6] BARRIERS AT EVAPORATED METAL-POLYCRYSTALLINE CDS INTERFACES - (PHOTOEMISSION - FILMS - CAPACITANCE - OHMIC CONTACTS - E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (06) : 144 - &

[7] MANSFIELD R, 1956, P PHYS SOC LONDON, VB 69, P76

[8] THEORY OF PHOTOCONDUCTIVITY IN SEMICONDUCTOR FILMS [J]. PHYSICAL REVIEW, 1956, 104 (06): : 1508 - 1516

[9] STRUCTURE CONDUCTIVITY AND HALL EFFECT OF ELECTRON BOMBARDMENT EVAPORATED SILICON FILMS ON SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1967, 10 (04) : 339 - &

[10] VAPOR SOURCE FOR VACUUM EVAPORATION OF COMPOUNDS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1966, 37 (11) : 1539 - &

[1] DOBROVOLSKII VN, 1963, SOV PHYS-SOL STATE, V4, P2025

[2] DOBROVOLSKII VN, 1962, FIZ TVERD TELA, V4, P2760

[3] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 79 (06): : 1013 - 1014

[4] KARPOVIC.IA, 1965, FIZ TVERD TELA+, V6, P2714

[5] KARPOVICH IA, 1964, FIZ TVERD TELA, V6, P3392

[6] BARRIERS AT EVAPORATED METAL-POLYCRYSTALLINE CDS INTERFACES - (PHOTOEMISSION - FILMS - CAPACITANCE - OHMIC CONTACTS - E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (06) : 144 - &

[7] MANSFIELD R, 1956, P PHYS SOC LONDON, VB 69, P76

[8] THEORY OF PHOTOCONDUCTIVITY IN SEMICONDUCTOR FILMS [J]. PHYSICAL REVIEW, 1956, 104 (06): : 1508 - 1516

[9] STRUCTURE CONDUCTIVITY AND HALL EFFECT OF ELECTRON BOMBARDMENT EVAPORATED SILICON FILMS ON SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1967, 10 (04) : 339 - &

[10] VAPOR SOURCE FOR VACUUM EVAPORATION OF COMPOUNDS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1966, 37 (11) : 1539 - &