INFLUENCE OF STRUCTURE PARAMETERS ON LASING CHARACTERISTICS OF SEMICONDUCTOR-LASERS

被引：9

作者：

MATSUMOTO, N

KUMABE, K

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 02期

关键词：

D O I：

10.1143/JJAP.18.321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of laser length l, stripe width w and facet reflectivity R on various lasing characteristics of AlGaAs–GaAs double hetero-structure semiconductor lasers is discussed experimentally, and the results are theoretically considered on the basis of the rate equations. It becomes clear that short cavity lasers with the high reflective facets are suitable for single longitudinal mode oscillation. © 1979 The Japan Society of Applied Physics.

引用

页码：321 / 332

页数：12

共 9 条

[1] PREPARATION AND PROPERTIES OF SIO ANTIREFLECTION COATINGS FOR GAAS INJECTION LASERS WITH EXTERNAL RESONATORS [J].