EXISTENCE OF 2 ADSORBED STATES FOR K ON THE SI(100) (2X1) SURFACE - A THERMAL-DESORPTION STUDY

被引:63
作者
TANAKA, S
TAKAGI, N
MINAMI, N
NISHIJIMA, M
机构
[1] Department of Chemistry, Faculty of Science, Kyoto University
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 03期
关键词
D O I
10.1103/PhysRevB.42.1868
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermal desorption spectroscopy (TDS) was applied to the investigation of the adsorbed state of K on the Si(100)(2×1) surface. Two K desorption peaks were observed and were attributed to the desorption of K atoms from two different chemisorbed states on the Si(100)(2×1) surface. The results strongly suggest that the fractional saturation coverage of K atoms in the chemisorbed state is 1. The coverage dependences of the peak temperatures and shapes of the TDS spectra are discussed. © 1990 The American Physical Society.
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收藏
页码:1868 / 1871
页数:4
相关论文
共 16 条
[1]   PHOTOELECTRON DIFFRACTION STUDY OF SI(001)2X1-K SURFACE - EXISTENCE OF A POTASSIUM DOUBLE-LAYER [J].
ABUKAWA, T ;
KONO, S .
PHYSICAL REVIEW B, 1988, 37 (15) :9097-9099
[3]  
[Anonymous], 1962, VACUUM
[4]   MEASUREMENT OF OVERLAYER-PLASMON DISPERSION IN K-CHAINS ADSORBED ON SI(001)2X1 [J].
ARUGA, T ;
TOCHIHARA, H ;
MURATA, Y .
PHYSICAL REVIEW LETTERS, 1984, 53 (04) :372-375
[5]   NOVEL ELECTRONIC-PROPERTIES OF A POTASSIUM OVERLAYER ON SI(001)-(2X1) [J].
CIRACI, S ;
BATRA, IP .
PHYSICAL REVIEW LETTERS, 1986, 56 (08) :877-880
[6]   SILICON HYDRIDE ETCH PRODUCTS FROM THE REACTION OF ATOMIC-HYDROGEN WITH SI(100) [J].
GATES, SM ;
KUNZ, RR ;
GREENLIEF, CM .
SURFACE SCIENCE, 1989, 207 (2-3) :364-384
[7]  
Gerlach R. L., 1970, Surface Science, V19, P403, DOI 10.1016/0039-6028(70)90050-6
[8]   LAYER RESOLVED SPECTROSCOPY OF POTASSIUM ADSORBED ON A RU(001) SURFACE - PHOTOEMISSION AND THERMAL-DESORPTION STUDY [J].
HRBEK, J ;
SHEK, ML ;
SHAM, TK ;
XU, GQ .
JOURNAL OF CHEMICAL PHYSICS, 1989, 91 (09) :5786-5792
[9]   COVERAGE DEPENDENCE OF THE ELECTRONIC-STRUCTURE OF POTASSIUM ADATOMS ON THE SI(001)-(2X1) SURFACE [J].
ISHIDA, H ;
TERAKURA, K .
PHYSICAL REVIEW B, 1989, 40 (17) :11519-11535
[10]   STRUCTURAL AND ELECTRONIC MODEL OF NEGATIVE ELECTRON AFFINITY ON SI-CS-O SURFACE [J].
LEVINE, JD .
SURFACE SCIENCE, 1973, 34 (01) :90-107