AUGER TRANSITIONS IN NARROW-GAP SEMICONDUCTORS WITH LAX BAND-STRUCTURE

被引：10

作者：

BENESLAVSKII, SD

DMITRIEV, AV

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(81)90520-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：811 / 814

页数：4

共 15 条

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[10] ASPECTS OF THE THEORY OF IMPACT IONIZATION IN SEMICONDUCTORS .1. [J].

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