ELECTRICAL-PROPERTIES OF TI AND CR ION-IMPLANTED DIAMONDS DEPENDENT ON TARGET TEMPERATURE

被引：16

作者：

SATO, S ^{[1
]}

IWAKI, M ^{[1
]}

SAKAIRI, H ^{[1
]}

机构：

[1] INST PHYS & CHEM RES RIKEN, WAKO, SAITAMA 35101, JAPAN

来源：

关键词：

D O I：

10.1016/S0168-583X(87)80164-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：822 / 825

页数：4

共 7 条

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SATO, S ;

TAKAHASHI, K ;

SAKAIRI, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :1129-1133

KALISH, R ;

BERNSTEIN, T ;

SHAPIRO, B ;

TALMI, A .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (3-4) :153-168

[4] ONSET OF HOPPING CONDUCTION IN CARBON-ION-IMPLANTED DIAMOND [J].

PRINS, JF .

[5]

SATO S, 1984, 15TH P S ION IMPL SU, P49

[6]

VAVILOV VS, 1979, SOV PHYS SEMICOND+, V13, P635

[7]

VAVILOV VS, 1974, SOV PHYS SEMICOND+, V8, P471