DETERMINATION OF THE BONDING AND GROWTH OF AG ON SI(100)-(2X1)

被引：39

作者：

SAMSAVAR, A ^{[1
]}

MILLER, T ^{[1
]}

CHIANG, TC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.38.9889

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9889 / 9894

页数：6

共 41 条

[1] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].

APPELBAUM, JA ;

HAMANN, DR .

SURFACE SCIENCE, 1978, 74 (01) :21-33

[2] METALLIZATION AND SCHOTTKY-BARRIER FORMATION [J].

BATRA, IP ;

CIRACI, S .

PHYSICAL REVIEW B, 1986, 33 (06) :4312-4314

[3] AN INVESTIGATION OF THE AU/GE(001) INTERFACE [J].

BENSON, JA ;

HANSEN, JC ;

MCELLISTREM, MT ;

CLENDENING, WD ;

TOBIN, JG .

SURFACE SCIENCE, 1988, 193 (1-2) :L37-L46

[4] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[5] INTERFACE FORMATION OF GAAS WITH SI(100), SI(111), AND GE(111) - CORE-LEVEL SPECTROSCOPY FOR MONOLAYER COVERAGES OF GAAS, GA, AND AS [J].

BRINGANS, RD ;

OLMSTEAD, MA ;

UHRBERG, RIG ;

BACHRACH, RZ .

PHYSICAL REVIEW B, 1987, 36 (18) :9569-9580

[6] CORE-LEVEL PHOTOEMISSION-STUDIES OF SURFACES, INTERFACES, AND OVERLAYERS [J].

CHIANG, TC .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 14 (03) :269-317

[7]

COULSON CA, 1958, VALENCE

[8] CORE-LEVEL BINDING-ENERGY SHIFTS AT SURFACES AND IN SOLIDS [J].

Egelhoff, W. F., Jr. .

SURFACE SCIENCE REPORTS, 1987, 6 (6-8) :253-415

[9]

HAMMERS RJ, 1986, PHYS REV B, V34, P5343

[10]

HANAWA T, 1977, JPN J APPL PHYS, V15, P519

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