MOLECULAR-BEAM EPITAXY STUDY OF BI2SR2CUOX USING NO2 AS AN OXIDIZING-AGENT

被引:42
作者
WATANABE, S
KAWAI, M
HANADA, T
机构
[1] Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Midori-ku, Tokyo, 227
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 07期
关键词
Bi[!sub]2[!/sub]sr[!sub]2[!/sub]cuo[!sub]x[!/sub; Mbe; No[!sub]2[!/sub; Srtio[!sub]3[!/sub](100);
D O I
10.1143/JJAP.29.L1111
中图分类号
O59 [应用物理学];
学科分类号
摘要
Molecular beam epitaxy (MBE) of Bi2Sr2CuOx films has been studied using NO2 as an oxidizing agent. The in situ RHEED and the XPS observations have shown that a two-dimensional layer of the Bi2Sr2CuOx phase is formed on a SrTiO3(100) surface even at 300°C under 2×10-7 Torr of NO2. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码:L1111 / L1113
页数:3
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