MINIGAP AND TRANSPORT IN A TWO-DIMENSIONAL ELECTRON-SYSTEM

被引:14
作者
ANDO, T
机构
[1] Institute of Applied Physics, University of Tsukuba, Sakura
关键词
D O I
10.1143/JPSJ.47.1595
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Conductivities are calculated in a two-dimensional inversion layer on a Si surface slightly tilted from the (001) both in the presence and in the absence of a magnetic field. Existence of a minigap caused by valley splitting is shown to strongly affect the two-dimensional conductivities. The calculation is performed in the Boltzmann transport theory and also in the self-consistent Born approximation in the presence of short-range scatterers. Characteristic behavior of the conductivities near the minigap is very sensitive to the existence of slight intervalley scattering matrix elements which have completely been ignored previously. Intervalley scatterings are crucial in explaining various experimental results. © 1979, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.
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页码:1595 / 1605
页数:11
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