GAAS-BASED FIBEROPTIC PRESSURE SENSOR

The paper describes a new sensor developed for measurement of hydrostatic pressure up to at least 100 MPa at a standard range of ambient temperatures. The sensor exploits the displacement of the optical absorption edge occurring in semiconductors under the influence of hydrostatic stress as a result of pressure-induced energy shifting of conduction band extrema. The sensing element is composed of an intrinsically pure GaAs single crystal configured in the form of a microprism located at the sensor tip, and attached to two multimode (50/125-mu-m) optical fibers designed to deliver input light to the sensor and to output a pressure-modulated light signal to the outside of a pressure region. Characterization of the sensor has been performed for pressures up to 100 MPa and for temperatures ranging from 5 to 50-degrees-C. A procedure has been proposed involving the use of two sensors (active and compensating) to minimize temperature drift through appropriate signal processing.