PHOTOLUMINESCENCE CHARACTERIZATION OF SINGLE HETEROJUNCTION QUANTUM-WELL STRUCTURES

被引:46
作者
AINA, O [1 ]
MATTINGLY, M [1 ]
JUAN, FY [1 ]
BHATTACHARYA, PK [1 ]
机构
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109
关键词
D O I
10.1063/1.98121
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:43 / 45
页数:3
相关论文
共 8 条
  • [1] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE
    CHANG, LL
    SAKAKI, H
    CHANG, CA
    ESAKI, L
    [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (25) : 1489 - 1493
  • [2] A DETAILED INVESTIGATION OF THE D-X CENTER AND OTHER TRAP LEVELS IN GAAS-ALXGA1-XAS MODULATION-DOPED HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    DHAR, S
    HONG, WP
    BHATTACHARYA, PK
    NASHIMOTO, Y
    JUANG, FY
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 698 - 706
  • [3] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
    DINGLE, R
    WIEGMANN, W
    HENRY, CH
    [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
  • [4] MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES
    FRIJLINK, PM
    MALUENDA, J
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L574 - L576
  • [5] A PROPOSAL OF SINGLE QUANTUM WELL TRANSISTOR (SQWT) - SELF-CONSISTENT CALCULATIONS OF 2D ELECTRONS IN A QUANTUM WELL WITH EXTERNAL VOLTAGE
    HAMAGUCHI, C
    MIYATSUJI, K
    HIHARA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (03): : L132 - L134
  • [6] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
    HIYAMIZU, S
    SAITO, J
    NANBU, K
    ISHIKAWA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611
  • [7] JUANG FY, 1986, J APPL PHYS, V58, P1986
  • [8] LEE K, 1983, IEEE T ELECTRON DEV, V30, P207