NOVEL HIGH-VOLTAGE TRANSISTOR FABRICATED USING THE INSITU JUNCTIONS IN A SI-TASI2 EUTECTIC COMPOSITE

被引：12

作者：

DITCHEK, BM

MIDDLETON, TR

ROSSONI, PG

YACOBI, BG

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 14期

关键词：

D O I：

10.1063/1.99187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1147 / 1149

页数：3

共 10 条

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[2] NOVEL HIGH QUANTUM EFFICIENCY SI-TASI2 EUTECTIC PHOTODIODES [J].

DITCHEK, BM ;

YACOBI, BG ;

LEVINSON, M .

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[3] SI-TASI2 INSITU JUNCTION EUTECTIC COMPOSITE DIODES [J].

DITCHEK, BM ;

LEVINSON, M .

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[4]

HELBREN NJ, 1973, J MATER SCI, V8, P1744, DOI 10.1007/BF02403526

[5]

LEVINSON LM, 1971, APPL PHYS LETT, V21, P289

[6] CAPACITANCE SPECTROSCOPY OF SI-TASI2 EUTECTIC COMPOSITE STRUCTURES [J].

LEVINSON, M ;

DITCHEK, BM ;

YACOBI, BG .

APPLIED PHYSICS LETTERS, 1987, 50 (26) :1906-1908

[7]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[8]

VANHOOF LAH, 1981, J APPL PHYS, V52, P3476

[9] CHARACTERIZATION OF MULTIPLE INSITU JUNCTIONS IN SI-TASI2 COMPOSITES BY CHARGE-COLLECTION MICROSCOPY [J].

YACOBI, BG ;

DITCHEK, BM .

APPLIED PHYSICS LETTERS, 1987, 50 (16) :1083-1085

[10]

YUE AS, 1982, 4TH P INT C COMP MAT, P1369

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