CAPACITANCE SPECTROSCOPY OF SI-TASI2 EUTECTIC COMPOSITE STRUCTURES

被引：9

作者：

LEVINSON, M

DITCHEK, BM

YACOBI, BG

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 26期

关键词：

D O I：

10.1063/1.97682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1906 / 1908

页数：3

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共 6 条

[1] BRIDGMAN AND CZOCHRALSKI GROWTH OF GE-TIGE2 EUTECTIC COMPOSITES [J].

DITCHEK, BM .

JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) :264-268

[2] SI-TASI2 INSITU JUNCTION EUTECTIC COMPOSITE DIODES [J].

DITCHEK, BM ;

LEVINSON, M .

APPLIED PHYSICS LETTERS, 1986, 49 (24) :1656-1658

[3] DEFECT STATES ASSOCIATED WITH DISLOCATIONS IN SILICON [J].

KIMERLING, LC ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :73-75

[4] DEPLETION LAYER CAPACITANCE OF CYLINDRICAL AND SPHERICAL P-N JUNCTIONS [J].

LEE, TP ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1967, 10 (11) :1105-&

[5] THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AT TANTALUM CENTERS IN SILICON [J].

MIYATA, K ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1976, 19 (07) :611-613

[6] CHARACTERIZATION OF MULTIPLE INSITU JUNCTIONS IN SI-TASI2 COMPOSITES BY CHARGE-COLLECTION MICROSCOPY [J].

YACOBI, BG ;

DITCHEK, BM .

APPLIED PHYSICS LETTERS, 1987, 50 (16) :1083-1085