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THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AT TANTALUM CENTERS IN SILICON

被引：4
作者：
MIYATA, K
SAH, CT
机构：
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 07期
关键词：
D O I：
10.1016/0038-1101(76)90059-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：611 / 613
页数：3
相关论文
共 6 条
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SAH, CT ;
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[6]   QUENCHED-IN CENTERS IN SILICON P+N JUNCTIONS [J].
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