QUENCHED-IN CENTERS IN SILICON P+N JUNCTIONS

[1] QUENCHED-IN DEFECTS IN P-TYPE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2983 - +

[2] PERIPHERAL AND DIFFUSED LAYER EFFECTS ON DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1171 - +

[3] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +

[4] BUEHLER MG, 1973, 2ND P INT S SEM SIL, P549

[5] DIFFUSION AND OXIDE MASKING IN SILICON BY THE BOX METHOD [J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 3 - &

[6] Deshpande R. Y., 1970, Radiation Effects, V4, P285, DOI 10.1080/00337577008242016

[7] QUENCHED-IN LEVELS IN P-TYPE SILICON [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 541 - &

[8] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436

[9] THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 405 - 415

[10] THERMAL CAPTURE OF ELECTRONS AND HOLES AT ZINC CENTERS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1133 - 1139

[1] QUENCHED-IN DEFECTS IN P-TYPE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2983 - +

[2] PERIPHERAL AND DIFFUSED LAYER EFFECTS ON DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1171 - +

[3] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +

[4] BUEHLER MG, 1973, 2ND P INT S SEM SIL, P549

[5] DIFFUSION AND OXIDE MASKING IN SILICON BY THE BOX METHOD [J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 3 - &

[6] Deshpande R. Y., 1970, Radiation Effects, V4, P285, DOI 10.1080/00337577008242016

[7] QUENCHED-IN LEVELS IN P-TYPE SILICON [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 541 - &

[8] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436

[9] THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 405 - 415

[10] THERMAL CAPTURE OF ELECTRONS AND HOLES AT ZINC CENTERS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1133 - 1139