QUENCHED-IN LEVELS IN P-TYPE SILICON

[1] ALBERS W, 1961, J ELECTRON CONTR, V10, P197

[2] IN-PILE HALL COEFFICIENT AND CONDUCTIVITY MEASUREMENTS ON ZONE-REFINED, P-TYPE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) : 1935 - &

[3] QUENCHED-IN DEFECTS IN P-TYPE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2983 - +

[4] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +

[5] CORBETT JW, 1965, PHYS REV, V138, pA543

[6] FAN HY, 1964, P INT C PHYS SEMICON

[7] INVESTIGATION OF QUENCHED-IN-DEFECTS IN GE AND SI BY MEANS OF 64CU [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (09) : 1463 - +

[8] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J]. PHYSICAL REVIEW, 1964, 134 (4A): : 1058 - +

[9] EXPERIMENTAL DETERMINATION OF DIFFUSION AND FORMATION ENERGIES OF THERMAL VACANCIES IN GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (01) : 34 - &

[10] THERMALLY INDUCED ACCEPTOR CENTERS IN GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (05) : 817 - &

[1] ALBERS W, 1961, J ELECTRON CONTR, V10, P197

[2] IN-PILE HALL COEFFICIENT AND CONDUCTIVITY MEASUREMENTS ON ZONE-REFINED, P-TYPE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) : 1935 - &

[3] QUENCHED-IN DEFECTS IN P-TYPE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2983 - +

[4] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +

[5] CORBETT JW, 1965, PHYS REV, V138, pA543

[6] FAN HY, 1964, P INT C PHYS SEMICON

[7] INVESTIGATION OF QUENCHED-IN-DEFECTS IN GE AND SI BY MEANS OF 64CU [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (09) : 1463 - +

[8] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J]. PHYSICAL REVIEW, 1964, 134 (4A): : 1058 - +

[9] EXPERIMENTAL DETERMINATION OF DIFFUSION AND FORMATION ENERGIES OF THERMAL VACANCIES IN GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (01) : 34 - &

[10] THERMALLY INDUCED ACCEPTOR CENTERS IN GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (05) : 817 - &