IN-PILE HALL COEFFICIENT AND CONDUCTIVITY MEASUREMENTS ON ZONE-REFINED, P-TYPE SILICON

被引：3

作者：

BAILEY, GC

WILLIAMS, CM

机构：

来源：

关键词：

D O I：

10.1063/1.1729715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1935 / &

共 29 条

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BAILEY, GC
WILLIAMS, CM
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[2] BILLINGTON DS, 1961, RADIATION DAMAGE SOL, P36
[3] BILLINGTON DS, 1961, RADIATION DAMAGE SOL, P34
[4] BURAS B, 1960, ACTA PHYS POLON, V19, P115
[5] CLELAND JB, CITED INDIRECTLY
[6] CLELAND JW, UNPUBLISHED
[7] PROPERTIES OF SILICON AND GERMANIUM
CONWELL, EM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1327 - 1337
[8] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER
CORBETT, JW
WATKINS, GD
CHRENKO, RM
MCDONALD, RS
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &
[9] CRAWFORD JH, 1959, PROGRESS SEMICONDUCT, V2, P67
[10] ELECTRON BOMBARDMENT OF SILICON
HILL, DE
[J]. PHYSICAL REVIEW, 1959, 114 (06): : 1414 - 1420