INVESTIGATION OF QUENCHED-IN-DEFECTS IN GE AND SI BY MEANS OF 64CU

被引:21
作者
FULLER, CS
WOLFSTIRN, KB
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D O I
10.1016/0022-3697(65)90045-4
中图分类号
O6 [化学];
学科分类号
0703 ;
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页码:1463 / +
页数:1
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