DONOR EQUILIBRIA IN THE GERMANIUM-OXYGEN SYSTEM

被引：35

作者：

FULLER, CS

KAISER, W

THURMOND, CD

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(61)90196-2

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：301 / 307

页数：7

共 13 条

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[4] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS
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[5] GULDNER WG, 1958, ASTM SPEC TECH PUB, V222
[6] INFRARED SPECTRA OF HEAT TREATMENT CENTERS IN SILICON
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[7] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON
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[8] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON
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[9] KAISER WJ, UNPUB
[10] CONDUCTIVITY AND HALL EFFECT IN THE INTRINSIC RANGE OF GERMANIUM
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