PROPERTIES OF OXYGEN IN GERMANIUM

[1] BOTTCHER CJF, 1952, THEORY ELECTRIC POLA

[2] OXYGEN AS A DONOR ELEMENT IN GERMANIUM [J]. NATURE, 1957, 180 (4598) : 1350 - 1351

[3] INTERACTIONS BETWEEN OXYGEN AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1264 - 1265

[4] INFRARED SPECTRA OF HEAT TREATMENT CENTERS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1958, 1 (06) : 199 - 200

[5] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756

[6] FACTORS DETERMINING THE OXYGEN CONTENT OF LIQUID SILICON AT ITS MELTING POINT [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (09) : 1292 - 1294

[7] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887

[8] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268

[9] Pauling L, 1955, NATURE CHEM BOND

[10] Pfann W. G., 1958, ZONE MELTING

[1] BOTTCHER CJF, 1952, THEORY ELECTRIC POLA

[2] OXYGEN AS A DONOR ELEMENT IN GERMANIUM [J]. NATURE, 1957, 180 (4598) : 1350 - 1351

[3] INTERACTIONS BETWEEN OXYGEN AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1264 - 1265

[4] INFRARED SPECTRA OF HEAT TREATMENT CENTERS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1958, 1 (06) : 199 - 200

[5] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756

[6] FACTORS DETERMINING THE OXYGEN CONTENT OF LIQUID SILICON AT ITS MELTING POINT [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (09) : 1292 - 1294

[7] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887

[8] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268

[9] Pauling L, 1955, NATURE CHEM BOND

[10] Pfann W. G., 1958, ZONE MELTING