DE HAAS-VAN ALPHEN EFFECT IN N-TYPE BI2TE3

[1] INFRA-RED FARADAY ROTATION AND FREE CARRIER ABSORPTION IN BI2TE3 [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (488): : 169 - 179

[2] ELECTRONIC BAND STRUCTURE OF BISMUTH TELLURIDE [J]. NUOVO CIMENTO B, 1968, 53 (02): : 283 - &

[3] FERMI SURFACE OF CALCIUM BY DE HAAS-VAN ALPHEN EFFECT [J]. PHYSICAL REVIEW, 1964, 134 (2A): : A446 - +

[4] ANISOTROPIC GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (11): : 1101 - 1108

[5] GALVANOMAGNETIC EFFECTS IN N-TYPE BISMUTH TELLURIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459): : 430 - 443

[6] DRABBLE JR, 1963, PROGRESS SEMICONDUCT, V7, P45

[7] BAND PARAMETERS AND G-FACTOR FOR N-TYPE BI2TE3 FROM SCHUBNIKOW-DE HAAS EFFECT [J]. PHYSICS LETTERS A, 1967, A 24 (10) : 504 - &

[8] STRUCTURE-CELL DATA AND EXPANSION COEFFICIENTS OF BISMUTH TELLURIDE [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1958, 9 (10): : 415 - 417

[9] GIBSON AF, 1963, PROGRESS SEMICOND ED, V7, P45

[10] Goldsmid H.J., 1965, MAT USED SEMICONDUCT, P165

[1] INFRA-RED FARADAY ROTATION AND FREE CARRIER ABSORPTION IN BI2TE3 [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (488): : 169 - 179

[2] ELECTRONIC BAND STRUCTURE OF BISMUTH TELLURIDE [J]. NUOVO CIMENTO B, 1968, 53 (02): : 283 - &

[3] FERMI SURFACE OF CALCIUM BY DE HAAS-VAN ALPHEN EFFECT [J]. PHYSICAL REVIEW, 1964, 134 (2A): : A446 - +

[4] ANISOTROPIC GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (11): : 1101 - 1108

[5] GALVANOMAGNETIC EFFECTS IN N-TYPE BISMUTH TELLURIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459): : 430 - 443

[6] DRABBLE JR, 1963, PROGRESS SEMICONDUCT, V7, P45

[7] BAND PARAMETERS AND G-FACTOR FOR N-TYPE BI2TE3 FROM SCHUBNIKOW-DE HAAS EFFECT [J]. PHYSICS LETTERS A, 1967, A 24 (10) : 504 - &

[8] STRUCTURE-CELL DATA AND EXPANSION COEFFICIENTS OF BISMUTH TELLURIDE [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1958, 9 (10): : 415 - 417

[9] GIBSON AF, 1963, PROGRESS SEMICOND ED, V7, P45

[10] Goldsmid H.J., 1965, MAT USED SEMICONDUCT, P165