PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC LIFETIME DETERMINATION IN PRESENCE OF TRAPPING .1. SMALL SIGNALS

被引：30

作者：

AMITH, A

机构：

来源：

PHYSICAL REVIEW | 1959年 / 116卷 / 04期

关键词：

D O I：

10.1103/PhysRev.116.793

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：793 / 802

页数：10

共 7 条

[1]

AMITH A, 1959, B AM PHYS SOC, V4, P28

[2] EFFECT OF TRAPS ON CARRIER INJECTION IN SEMICONDUCTORS [J].

FAN, HY .

PHYSICAL REVIEW, 1953, 92 (06) :1424-1428

[3]

Institute of technical Physics, 1955, CZECH J PHYS, V5, P178

[4] PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS IN INSB [J].

KURNICK, SW ;

ZITTER, RN .

[5]

ROSE A, 1957, PROGR SEMICONDUCTORS, V2

[6] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[7] THEORY OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS [J].

VANROOSBROECK, W .

PHYSICAL REVIEW, 1956, 101 (06) :1713-1725