SPECTROSCOPIC INVESTIGATION OF N2-H2-AR-TICL4-ASSISTED CHEMICAL VAPOR-DEPOSITION DISCHARGE FOR PLASMA OF TIN

被引：15

作者：

RIE, KT

WOHLE, J

机构：

[1] Institut für Oberflächentechnik und plasmatechnische Werkstoffenwicklung, Technische Universität Braunschweig, W-3300 Braunschweig

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1991年 / 139卷

关键词：

D O I：

10.1016/0921-5093(91)90592-B

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The plasma-assisted chemical vapour deposition process for deposition of steel substrates with TiN layers was investigated by optical emission spectroscopy. Several atomic lines and molecular bands were identified in the emitted spectrum of the discharge. The nitrogen in the discharge was found mostly in a molecular state (N2* and N2+*). No bands of subchlorides of titanium and titanium nitride could be found in the spectrum. Titanium was identified in the ionized state. This Ti+ intensity seems to be the controlling factor for layer growth.

引用

页码：37 / 40

页数：4

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