SUBBAND SPECTROSCOPY AT ROOM-TEMPERATURE

被引：13

作者：

SCHAFFLER, F

KOCH, F

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 37卷 / 04期

关键词：

D O I：

10.1016/0038-1098(81)90377-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：365 / 368

页数：4

相关论文

共 12 条

[1] LINESHAPE OF INTER-SUBBAND OPTICAL-TRANSITIONS IN SPACE-CHARGE LAYERS
ANDO, T
[J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1976, 24 (01): : 33 - 39
[2] INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES
ANDO, T
[J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03): : 263 - 272
[3] SPECTROSCOPY OF ELECTRON SUB-BAND LEVELS IN AN INVERSION LAYER ON INSB
BEINVOGL, W
KOCH, JF
[J]. SOLID STATE COMMUNICATIONS, 1977, 24 (09) : 687 - 690
[4] STRESS AND TEMPERATURE-DEPENDENCE OF SUBBAND STRUCTURE IN SILICON INVERSION LAYERS
DASSARMA, S
KALIA, RK
NAKAYAMA, M
QUINN, JJ
[J]. PHYSICAL REVIEW B, 1979, 19 (12): : 6397 - 6406
[5] RESONANCE SPECTROSCOPY OF ELECTRONIC LEVELS IN A SURFACE ACCUMULATION LAYER
KAMGAR, A
KNESCHAU.P
DORDA, G
KOCH, JF
[J]. PHYSICAL REVIEW LETTERS, 1974, 32 (22) : 1251 - 1254
[6] ELECTRONIC LEVELS IN SURFACE SPACE-CHARGE LAYERS ON SI(100)
KNESCHAUREK, P
KAMGAR, A
KOCH, JF
[J]. PHYSICAL REVIEW B, 1976, 14 (04) : 1610 - 1622
[7] TEMPERATURE-DEPENDENCE OF ELECTRON INTER-SUBBAND RESONANCE ON (100) SI SURFACES
KNESCHAUREK, P
KOCH, JF
[J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1590 - 1596
[8] MCCOMBE BD, UNPUBLISHED
[9] MCCOMBE BD, 1978, 14TH P INT C PHYS SE, P1227
[10] MANY-BODY EFFECTS IN THE SI METAL-OXIDE-SEMICONDUCTOR INVERSION LAYER - SUBBAND STRUCTURE
NAKAMURA, K
EZAWA, H
WATANABE, K
[J]. PHYSICAL REVIEW B, 1980, 22 (04): : 1892 - 1904