A NOVEL-APPROACH TO CONTROLLED PROGRAMMING OF TUNNEL-BASED FLOATING-GATE MOSFETS

被引：13

作者：

LANZONI, M ^{[1
]}

BRIOZZO, L ^{[1
]}

RICCO, B ^{[1
]}

机构：

[1] SGS THOMSON,I-20041 AGRATE BRIANZA,ITALY

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1994年 / 29卷 / 02期

关键词：

D O I：

10.1109/4.272121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new approach to obtain automatic and accurate control of the threshold voltage of floating-gate MOSFET's programmable by means of tunneling current. The proposed method avoids using a series of partial write/erase operations followed by measurements and adjustment steps, thus achieving a significant advantage in terms of programming time for the same accuracy. The simplicity of the proposed method and its inherent speed make it ideal in a wide range of possible applications.

引用

页码：147 / 150

页数：4