EFFECT OF EMITTER DOPING ON DEVICE CHARACTERISTICS

[1] BUHANAN D, 1969, IEEE T ELECTRON DEVI, VED16, P117

[2] CHARACTERISTICS OF BURST NOISE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (06): : 652 - +

[3] DEMAN HJJ, 1971, IEEE T ELECTRON DEVI, VED18, P833

[4] EFFECTS OF HIGH PHOSPHORUS CONCENTRATION ON DIFFUSION INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) : 84 - &

[5] JASTRZEBSKA M, 1966, J PHYS STATUS SOLIDI, V14, P381

[6] KANNAM PJ, 1971, IEEE T ELECTRON DEV, VED18, P109

[7] KAUFFMAN WL, 1968, IEEE T ELECTRON DEVI, VED15, P732

[8] LANE CH, 1968, IEEE T ELECTRON DEVI, VED15, P998

[9] DIFFUDION-INDUCED STRESS AND LATTICE DISORDERS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 819 - &

[10] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78

[1] BUHANAN D, 1969, IEEE T ELECTRON DEVI, VED16, P117

[2] CHARACTERISTICS OF BURST NOISE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (06): : 652 - +

[3] DEMAN HJJ, 1971, IEEE T ELECTRON DEVI, VED18, P833

[4] EFFECTS OF HIGH PHOSPHORUS CONCENTRATION ON DIFFUSION INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) : 84 - &

[5] JASTRZEBSKA M, 1966, J PHYS STATUS SOLIDI, V14, P381

[6] KANNAM PJ, 1971, IEEE T ELECTRON DEV, VED18, P109

[7] KAUFFMAN WL, 1968, IEEE T ELECTRON DEVI, VED15, P732

[8] LANE CH, 1968, IEEE T ELECTRON DEVI, VED15, P998

[9] DIFFUDION-INDUCED STRESS AND LATTICE DISORDERS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 819 - &

[10] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 72 - 78