Fatigue behaviour of ferroelectric thin films for non-volatile memories

被引：3

作者：

Chiorboli, G ^{[1
]}

Franco, G ^{[1
]}

Leccabue, F ^{[1
]}

Watts, BE ^{[1
]}

机构：

[1] CNR,IST MASPEC,I-43100 PARMA,ITALY

来源：

INTEGRATED FERROELECTRICS | 1995年 / 8卷 / 1-2期

关键词：

D O I：

10.1080/10584589508012304

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of temperature and atmosphere during the crystallization process on electrical and reliability characteristics of ferroelectric capacitors, obtained by sol-gel deposition of lead zirconate titanate films, have been examined for non-volatile memory applications. Films with good ferroelectric properties were achieved after 600 and 650 degrees C, 1 hour crystallization in a O-2 atmosphere: a remanent polarization of about 20 mu C/cm(2) and a coercive field of 125 kV/cm was obtained with a durability factor better than 10(8) cycles. The results point out that in 52/48 lead zirconate/titanate films, where a morphotropic phase boundary exists, fatigue more likely results from a stress relief process than from charge migration.

引用

页码：99 / 108

页数：10

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[3]

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